By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)
Amorphous Silicon/Crystalline Silicon sun Cells bargains with a few common homes of heterojunction sun cells, reminiscent of their heritage, the homes and the demanding situations of the cells, a few very important measurementtools, a few simulation courses and a short survey of the state-of-the-art, aiming to supply an preliminary framework during this box and function a prepared reference for all these drawn to the topic. This publication is helping to “fill within the blanks” on heterojunction sun cells. Readers will obtain a complete review of the rules, buildings, processing suggestions and the present developmental states of the units.
Prof. Dr. Wolfgang R. Fahrner is a professor on the college of Hagen, Germany and Nanchang collage, China.
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Extra resources for Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells
By depositing an a-SixNy:H of around 70 nm thickness, antireflection properties are added as a third functionality to this layer. The creation of the front surface field accumulation layer on the n-type c-Si substrates is the main difference compared to the front side inversion layer on p-type substrates of MIS inversionlayer silicon solar cell by Hezel et al. . The a-Si:H emitter layer at the rear is therefore freed of the condition to be as thin (as transparent) as possible and can be optimized in view of minimum interfacial recombination velocity and maximized open-circuit voltage.
Additionally, the a-SiOx:H films yield a surface passivation quality exceeding earlier published record passivation schemes such as SiNx and SiO2. Therefore, the use of a-SiOx:H may be a promising alternative for any passivation scheme existing so far. Advantages of the a-SiOx:H passivation scheme are that the fabricated a-SiOx:H 34 W. R. Fahrner layers are grown by simple PECV deposition at low temperatures, they withstand hydrofluoric acid (tested with a 5 % diluted HF dip for 1 min) and high temperatures up to 350 °C.
Among the many options, laser ablation of a-SixNy:H, selective electroless plating of the openings, and local laser-annealing appear to be the solution with the lowest front grid shading and the best maintenance for the electronic passivation of the a-SixNy:H/c-Si interface . 6 Interdigitated HIT Cell The final goal for any photovoltaic device is to avoid at all shading or filtering of the sunlight entering the cells absorber. This of course necessitates the preparation of both contacts at the rear and the use of an extremely transparent passivation layer at the front as already used for the inverted cell described above.